| PART |
Description |
Maker |
| GT50J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
| MJE18004 MJE18004G MJF18004 MJF18004G |
NPN Bipolar Power Transistor For Switching Power Supply Applications
|
ON Semiconductor
|
| 2SD2115 2SD2115L 2SD2115S |
Bipolar power switching transistor
Silicon NPN Epitaxial Planar(Low frequency power amplifier)
|
HITACHI[Hitachi Semiconductor]
|
| FA7616CP FA7616CPE FA7616CPV |
Bipolar IC For Switching Power Supply Control
|
FUJI[Fuji Electric]
|
| FA5304AP FA5304APS FA5305AP FA5305APS FA5304AS FA5 |
Bipolar IC For Switching Power Supply Control
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
|
| GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| BUL44-D |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
Power 2A 400V NPN
|
ON Semiconductor
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| GT15Q102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
http://
|
